Effect Of Added Si On The Resistivity Of Co And Ni Films

S.-J. Kim; Y.-T. Cheng; M-A. Nicolet

doi:10.1117/12.961217

26 June 1986 Effect Of Added Si On The Resistivity Of Co And Ni Films

S.-J. Kim, Y.-T. Cheng, M-A. Nicolet

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961217
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Chemical and electrical changes in Co/Si and Ni/Si bilayered films on Si0₂ substrates are investigated. The Si thicknesses chosen correspond to 0 to 11 atomic percent of the total film. After the films were vacuum annealed at 400, 500, 600, 700, 800, and 900°C for 1 hour, they were examined by means of ⁴He⁺ backscattering spectrometry, x-ray Read camera and diffractometer, scanning electron and optical microscopy, and four point probe resistivity measurements. At low annealing temperatures, we observe the Ni₅Si₂, Ni₃Si and Co₂Si phases. At 800 and 900°C, Si dissolves in the film. The film resistivity increses rapidly as the amount of dissolved Si in the film rises. For example, 2 at.% and 3.6 at.% suffice to double the film resistivity of Co and Ni, respectively. The lattice parameter perpendicular to the plane of the film for films annealed at 900°C was determined at room temperature and found to decrease with increasing Si content. The surface of a pure metal film becomes nonuniform upon 900°C annealing; adding as little as 2.5 at.% Si stabilizes the film morphology.

Citation Download Citation

S.-J. Kim, Y.-T. Cheng, and M-A. Nicolet "Effect Of Added Si On The Resistivity Of Co And Ni Films", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961217

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