Monte Carlo Probe Of Ultrafast Phenomena In Polar Semiconductors

Paolo Lugli; Stephen M. Goodnick

doi:10.1117/12.947188

22 August 1988 Monte Carlo Probe Of Ultrafast Phenomena In Polar Semiconductors

Paolo Lugli, Stephen M. Goodnick

Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947188
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

The paper presents a Monte Carlo study of ultrafast phenomena in polar semiconductors. The main focus is given to the analysis of cooling of carriers following subpicosecond laser excitations in GaAs and InP. Excellent agreement is found with time-resolved photoluminescence data. A strong non-equilibrium LO phonon population is found, which at high densities and low temperatures slows down the cooling of the photoexcited carriers. The role of upper valleys in the cooling process is crucial and explains the different behavior found in GaAs versus InP. A discussion of experimentally determined effective temperatures is given.

Citation Download Citation

Paolo Lugli and Stephen M. Goodnick "Monte Carlo Probe Of Ultrafast Phenomena In Polar Semiconductors", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947188

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