Paper
25 November 1986 Laser Photochemistry Of Gallium-Containing Compounds
Steven L Baughcum, Richard C Oldenborg
Author Affiliations +
Proceedings Volume 0669, Laser Applications in Chemistry; (1986) https://doi.org/10.1117/12.938939
Event: 1986 Quebec Symposium, 1986, Quebec City, Canada
Abstract
The production of gas-phase gallium atoms in the photolysis of trimethylgallium has been investigated at 193 nm and at other laser wavelengths. Ground state (42P03/2) and metastable (4 2P01/2) gallium atoms are detected using laser-induced fluorescence techniques. Our results indicate that gallium atoms continue to be produced at long times after the laser pulse. The observed dependences on photolysis laser fluence, trimethylgallium pressure, and buffer gas pressure are consistent with a mechanism in which highly excited gallium methyl radicals undergo unimolecular decomposition to produce gallium atoms. Since this process is observed to happen on the time scale of hundreds of microseconds, these results have important implications for studies of metal deposition and direct laser writing by laser photolysis of organometallic compounds.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven L Baughcum and Richard C Oldenborg "Laser Photochemistry Of Gallium-Containing Compounds", Proc. SPIE 0669, Laser Applications in Chemistry, (25 November 1986); https://doi.org/10.1117/12.938939
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KEYWORDS
Gallium

Photolysis

Chemical species

Argon

Chemistry

Metals

Laser applications

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