Material Characterization And Device Performance Of Liquid Doping Si In GaAs By AsCl[sub]3[/sub] Technique

M. Feng; V. Eu; T. Zielinski; J. M. Whelan

doi:10.1117/12.934274

15 September 1982 Material Characterization And Device Performance Of Liquid Doping Si In GaAs By AsCl₃ Technique

M. Feng, V. Eu, T. Zielinski, J. M. Whelan

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934274
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

This paper describes a method for the reproducible Si-doping of GaAs epitaxial material in the range of lx1016 to 2x1019 cm-3, using a SiCl4 + AsC13 liquid source in a GaAs + Ga/H2/AsC13 chemical vapor deposition process. Excellent electron mobilities have been achieved for a variety of Si doped GaAs samples. Power FET devices made from this material have demonstrated output power densities of 0.86 watts/mm at 10 GHz. Low noise FET devices made from this material have demonstrated a noise figure of 2.2 dB with 8.5 dB associated gain at 12 GHz.

Citation Download Citation

M. Feng, V. Eu, T. Zielinski, and J. M. Whelan "Material Characterization And Device Performance Of Liquid Doping Si In GaAs By AsCl₃ Technique", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934274

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available