Paper
15 April 2011 Deprotonation mechanism of poly(styrene-acrylate)-based chemically amplified resist
Y. Tajima, K. Okamoto, T. Kozawa, S. Tagawa, R. Fujiyoshi, T. Sumiyoshi
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Abstract
The influence of degree of copolymerization of poly(styrene-ran-methyl methacrylate) [P(S-MMA)] on the deprotonation mechanism for EUV chemically amplified resists were investigated by pulse radiolysis, quantity of the acid yield, and density functional theory methods. The degradation of MMA unit occurs immediately before the hole transfer to the styrene unit in P(S-MMA) in the low PS mole fraction (< 50 %). The hole transfer from MMA unit to styrene units occurred in the high PS mole fraction (> 70 %). It is assumed that the formation of styrene multimer (n > 3) causes the hole transfer.
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Y. Tajima, K. Okamoto, T. Kozawa, S. Tagawa, R. Fujiyoshi, and T. Sumiyoshi "Deprotonation mechanism of poly(styrene-acrylate)-based chemically amplified resist", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721N (15 April 2011); https://doi.org/10.1117/12.879362
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KEYWORDS
Picosecond phenomena

Absorption

Extreme ultraviolet

Polymers

Chemically amplified resists

Lithography

Oscillators

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