Paper
25 March 2010 Design, synthesis, and characterization of fluorine-free PAGs for 193-nm lithography
Sen Liu, Martin Glodde, Pushkara Rao Varanasi
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Abstract
Photoacid generators (PAGs) are a key component in chemically amplified resists used in photolithography. Perfluorooctanesulfonates (PFOS) and other perfluoroalkylsulfonates (PFAS) have been well adopted as PAGs in 193 nm photoresist. Recently, concerns have been raised about their environmental impact due to their chemical persistency, bioaccumulation and toxicity. It is a general interest to find environmentally benign PAGs that are free of fluorine atoms. Here we describe the design, synthesis and characterization of a series of novel fluorine-free onium salts as PAGs for 193 nm photoresists. These PAGs demonstrated desirable physical and lithography properties when compared with PFAS-based PAGs for both dry and immersion exposures.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sen Liu, Martin Glodde, and Pushkara Rao Varanasi "Design, synthesis, and characterization of fluorine-free PAGs for 193-nm lithography", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390D (25 March 2010); https://doi.org/10.1117/12.846600
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KEYWORDS
Lithography

Polymers

Photoresist materials

Semiconducting wafers

Fluorine

Silver

Scanning electron microscopy

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