Three-dimensional metrology with side-wall measurement using tilt-scanning operation in digital probing AFM

Ken Murayama; Satoshi Gonda; Hajime Koyanagi; Tsuneo Terasawa

doi:10.1117/12.654346

24 March 2006 Three-dimensional metrology with side-wall measurement using tilt-scanning operation in digital probing AFM

Ken Murayama, Satoshi Gonda, Hajime Koyanagi, Tsuneo Terasawa

Author Affiliations +

Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 615216 (2006) https://doi.org/10.1117/12.654346
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

We have developed a new measurement techniques employing digital probing with AFM (Atomic Force Microscope) that can examine sidewalls of fine patterns. This new technique employs digital probing operations, such sample-tilt step-in operation, tilt-step-in operation with a sharpened tilted tip, and multi-angle step-in operation with a flared tip. First, we examined the validity of digital probing operation using a carbon nanotube (CNT) tip, showing the measurement repeatability of approximately 1 nm (3σ) on a fine trench pattern with 50 nm width and 300 nm depth. After the slip calculation between the tilted-tip and the sidewall for the new sidewall measurement technique, we measured a perpendicular reference sidewall with two types of operations, namely, tilt-step-in and multi-angle step-in operations. We then obtained 3D images of ArF resist patterns that involved measurement of sidewall surface roughness. Finally, we demonstrated a possibility of extending the technique for measuring denser trench patterns by using sample-tilt method and a tilted CNT tip.

Citation Download Citation

Ken Murayama, Satoshi Gonda, Hajime Koyanagi, and Tsuneo Terasawa "Three-dimensional metrology with side-wall measurement using tilt-scanning operation in digital probing AFM", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 615216 (24 March 2006); https://doi.org/10.1117/12.654346

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