Solving inverse problems of optical microlithography

Yuri Granik

doi:10.1117/12.600141

12 May 2005 Solving inverse problems of optical microlithography

Yuri Granik

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.600141
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The direct problem of microlithography is to simulate printing features on the wafer under given mask, imaging system, and process characteristics. The goal of inverse problems is to find the best mask and/or imaging system and/or process to print the given wafer features. In this study we will describe and compare solutions of inverse mask problems. Pixel-based inverse problem of mask optimization (or "layout inversion") is harder than inverse source problem, especially for partially-coherent systems. It can be stated as a non-linear constrained minimization problem over complex domain, with large number of variables. We compare method of Nashold projections, variations of Fienap phase-retrieval algorithms, coherent approximation with deconvolution, local variations, and descent searches. We propose electrical field caching technique to substantially speedup the searching algorithms. We demonstrate applications of phase-shifted masks, assist features, and maskless printing.

Citation Download Citation

Yuri Granik "Solving inverse problems of optical microlithography", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.600141

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