High-power high-brightness semiconductor lasers

D. Botez

doi:10.1117/12.579422

31 January 2005 High-power high-brightness semiconductor lasers

D. Botez

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.579422
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

Broad-stripe (greater than or equal to 100 microns) diode lasers have achieved CW powers as high as 15W, and wallplug efficiencies as high as 70%. For high coherent power photonic-crystal structures with modulated gain, that is active photonic crystals (APCs), of large index steps have been used, as early as 1988, for effective lateral-mode control range in large-aperture (100-200 microns) devices. Photonic-bandpass (PBP) structures relying on long-range resonant leaky-wave coupling, so called ROW arrays, have allowed stable, near-diffraction-limited beam operation to powers as high as 1.6W CW and 10W peak pulsed. Photonic-bandgap (PBG) structures with a built-in lattice defect, so called ARROW lasers, have provided up to 0.5W CW stable, single-mode power and hold the potential for 1W CW highly reliable single-mode operation. The solution for high-efficiency surface emission, from 2^nd-order DFB/DBR lasers, in a single-lobe beam pattern was found in 2000. Single-lobe and single-mode operation in a diffraction-limited beam orthonormal to the chip surface was demonstrated, which opens the way for the realization of 2-D surface-emitting, 2^nd-order APCs for the stable generation of watts of CW single-lobe, single-mode power from large 2-D apertures, as well as scalability of such devices at the wafer level.

Citation Download Citation

D. Botez "High-power high-brightness semiconductor lasers", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.579422

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