Simulation of femtosecond laser ablation of silicon

Roman Holenstein; Sean E. Kirkwood; Robert Fedosejevs; Ying Y. Tsui

doi:10.1117/12.567675

16 November 2004 Simulation of femtosecond laser ablation of silicon

Roman Holenstein, Sean E. Kirkwood, Robert Fedosejevs, Ying Y. Tsui

Proceedings Volume 5579, Photonics North 2004: Photonic Applications in Telecommunications, Sensors, Software, and Lasers; (2004) https://doi.org/10.1117/12.567675
Event: Photonics North, 2004, Ottawa, Ontario, Canada

Abstract

Femtosecond laser ablation is an important process in the micromachining and nanomachining of microelectronic, optoelectronic, biophotonic and MEMS components. The process of laser ablation of silicon is being studied on an atomic level using molecular dynamics (MD) simulations. We investigate ablation thresholds for Gaussian laser pulses of 800 nm wavelength, in the range of a few hundred femtoseconds in duration. Absorption occurs into a hot electron bath which then transfers energy into the crystal lattice. The simulation box is a narrow column approximately 6 nm x 6 nm x 80 nm with periodic boundaries in the x and y transverse directions and a 1-D heat flow model at the bottom coupled to a heat bath to simulate an infinite bulk medium corresponding to the solid bulk material. A modified Stillinger-Weber potential is used to model the silicon atoms. The calculated thresholds are compared to various reported experimental values for the ablation threshold of silicon. We provide an overview of the code and discuss the simulation techniques used.

Citation Download Citation

Roman Holenstein, Sean E. Kirkwood, Robert Fedosejevs, and Ying Y. Tsui "Simulation of femtosecond laser ablation of silicon", Proc. SPIE 5579, Photonics North 2004: Photonic Applications in Telecommunications, Sensors, Software, and Lasers, (16 November 2004); https://doi.org/10.1117/12.567675

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