Paper
16 September 2003 Dual-layer phase-change recording media for system with NA of 0.65 and light incidence on 0.6-mm-thick substrate
Takayuki Tsukamoto, T. Nakai, Sumio Ashida, Keiichiro Yusu, Katsutaro Ichihara, Noritake Ohmachi, Naoki Morishita, N. Yoshida, Naomasa Nakamura
Author Affiliations +
Proceedings Volume 5069, Optical Data Storage 2003; (2003) https://doi.org/10.1117/12.532422
Event: Optical Data Storage 2003, 2003, Vancouver, Canada
Abstract
We have investigated the recording characteristics of the dual-layer phase change recording media for the sysetm with the NA of 0.65, the wavelength of 405 nm, and the light incidence on 0.6-mm-thick substrate having the land and groove format. For both L0 and L1 of the dual-layer disc, we have adopted bismuth substituted pseudo-binary GeSbTe alloy film as the recording layer and a novel interface layer material in order to improve overwriting characteristics. Bit error rate measurements have successfully demonstrated the feasibility of the user capacity of 36GB and confirmed 30GB with tilt margins.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takayuki Tsukamoto, T. Nakai, Sumio Ashida, Keiichiro Yusu, Katsutaro Ichihara, Noritake Ohmachi, Naoki Morishita, N. Yoshida, and Naomasa Nakamura "Dual-layer phase-change recording media for system with NA of 0.65 and light incidence on 0.6-mm-thick substrate", Proc. SPIE 5069, Optical Data Storage 2003, (16 September 2003); https://doi.org/10.1117/12.532422
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Cited by 2 scholarly publications.
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KEYWORDS
Interfaces

Lithium

Bismuth

Reflectivity

Germanium antimony tellurium

Transmittance

Crystals

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