Hole transport in Ge/Si quantum dot field-effect transistors

Andrei I. Yakimov; A. V. Dvurechenskii; V. V. Kirienko; Alexander I. Nikiforov

doi:10.1117/12.513622

11 June 2003 Hole transport in Ge/Si quantum dot field-effect transistors

Andrei I. Yakimov, A. V. Dvurechenskii, V. V. Kirienko, Alexander I. Nikiforov

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.513622
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

We report on the transport properties of Si field-effect transistors with an array of approximately 10³ 10-nm-diameter Ge self-assembled quantum dots embedded into the active channel. The drain current versus gate voltage characteristics show oscillations caused by Coulomb interaction of holes in the fourfold-degenerate excited state of the dots even at room temperature. A dot charging energy of approximately 43 meV (i.e., > kT = 26 meV at T = 300 K) and disorder energy of approximately 20 meV are determined from the oscillation period ad the temperature dependence sudy of current maxima, respectively.

Citation Download Citation

Andrei I. Yakimov, A. V. Dvurechenskii, V. V. Kirienko, and Alexander I. Nikiforov "Hole transport in Ge/Si quantum dot field-effect transistors", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.513622

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