Sub-0.35-um i-line lithography with new advanced bottom antireflective coatings optimized for high-topography and dual-damascene applications

Shreeram V. Deshpande; Nickolas L. Brakensiek; Paul Williams; Kelly A. Nowak; Shelly Fowler

doi:10.1117/12.425227

26 April 2001 Sub-0.35-μm i-line lithography with new advanced bottom antireflective coatings optimized for high-topography and dual-damascene applications

Shreeram V. Deshpande, Nickolas L. Brakensiek, Paul Williams, Kelly A. Nowak, Shelly Fowler

Author Affiliations +

Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425227
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

This paper describes the development of a new conformal i- line BARC. With the advent of flash memory deices the topography can be greater than 0.5 micrometers . Maintaining CD control through the BARC etch step over such a high topography can be a challenge. In order to meet these needs, Brewer Science has developed a highly conformal, spin bowl compatible BARC with increased baseline etch rate. This new BARC exhibits excellent coverage on high topographies and thus reduces the need for over-etch due to its conformality , and also increase the throughput due to its higher etch rate. As the circuit density on the chip increases copper is being implemented as the metal of choice for interconnects to reduce line resistance in semiconductor devices. This paper also describes the development of an organic BARC for applications in dual damascene processing. Via first dual damascene processes used for copper integration requires materials which can provide anti-reflection properties as well as act as etch blocks by filling the vias. The dual damascene BARC reported in this paper exhibits excellent via fill properties to reduce resist thickness variations as well as provide anti-reflective and via etch block properties. This paper outlines the design, development, and performance characterization of the new i-line BARC platforms for both high topography as well as dual damascene applications in sub 0.35 (Mu) m i-line lithography.

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Shreeram V. Deshpande, Nickolas L. Brakensiek, Paul Williams, Kelly A. Nowak, and Shelly Fowler "Sub-0.35-μm i-line lithography with new advanced bottom antireflective coatings optimized for high-topography and dual-damascene applications", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425227

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KEYWORDS

Etching

Photoresist materials

Semiconducting wafers

Lithography

Polymers

Reflectivity

Manufacturing

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