Paper
8 March 2001 Fast electro-optical switching of single-barrier tunneling LEDs
I. Romandic, N. Zurauskiene, F. Van Bragt, Etienne Goovaerts, Chris A. Van Hoof, Gustaaf Borghs
Author Affiliations +
Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417610
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
Abstract
We have studied the optical response of two single-barrier AlAs/GaAs tuneling-based light-emitting diodes (TLED's) excited by very fast electrical pulses (transition times of less than 100 ps). The grown TLED's were identical except for the barrier width, which was chosen to be 4 and 6 nm, respectively. Streak-camera time-resolved spectra were recorded at room and liquid-nitrogen temperature, while simultaneously monitoring the current and voltage pulses. Both diodes show very fast switch-on and switch-off, with the room temperature 3-dB modulation bandwidth of 3 GHz for the 6 nm sample and 1.8 GHz for the 4 nm TLED.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Romandic, N. Zurauskiene, F. Van Bragt, Etienne Goovaerts, Chris A. Van Hoof, and Gustaaf Borghs "Fast electro-optical switching of single-barrier tunneling LEDs", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); https://doi.org/10.1117/12.417610
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KEYWORDS
Light emitting diodes

Electro optics

Switching

Diodes

Modulation

Picosecond phenomena

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