Paper
4 October 2000 Optimization issues of AlGaAs/GaAs QW-SCH lasers intended for 808-nm range
Andrzej Malag, Bohdan Mroziewicz, Anna Kozlowska, Wlodzimierz Strupinski, Lech Dobrzanski, Marian Teodorczyk, Sylwia Wrobel, Malgorzata Mozdzonek
Author Affiliations +
Abstract
To meet the requirements for the narrow emission line of ht laser diode pumping system exactly at 808 nm wavelength, an optimization of the laser (AlGa)As heterostructure because of the composition and thickness of the constituent layers is necessary. In the paper the design principles, the characteristics of the manufactured laser diodes based on this design and intrinsic limitations of the possibility of 'tuning' the lasers to desired wavelength in the MOVPE growth process are presented.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Malag, Bohdan Mroziewicz, Anna Kozlowska, Wlodzimierz Strupinski, Lech Dobrzanski, Marian Teodorczyk, Sylwia Wrobel, and Malgorzata Mozdzonek "Optimization issues of AlGaAs/GaAs QW-SCH lasers intended for 808-nm range", Proc. SPIE 4237, Laser Technology VI: Progress in Lasers, (4 October 2000); https://doi.org/10.1117/12.402862
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KEYWORDS
Heterojunctions

Semiconductor lasers

Quantum wells

Aluminum

Laser applications

Laser systems engineering

Diodes

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