Paper
19 July 1999 Interatomic force constant of AII BIV C2V and AI BIII C2VI optoelectronic materials
Virendra Kumar, Dinesh Chandra
Author Affiliations +
Proceedings Volume 3749, 18th Congress of the International Commission for Optics; (1999) https://doi.org/10.1117/12.354871
Event: ICO XVIII 18th Congress of the International Commission for Optics, 1999, San Francisco, CA, United States
Abstract
Interatomic force constant ((alpha) ) of the A-C and B-C bonds in AIIBIVC2V and AIBIIIC2VI groups of optoelectronic materials has been calculated using plasma oscillations theory of solids. A new relation between force constant and plasmon energy has been obtained. The effect of delocalization of noble metal d- electrons has been taken into account while calculating the force constant of the A-C bond in AIBIIIC2VI semiconductors. On the basis of the best-fit data, another simple equation has been proposed for the calculation of the force constant from their plasmon energy. The calculated values of force constant from these equations have been compared with the values reported by different workers. An excellent agreement has been obtained between them.
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Virendra Kumar and Dinesh Chandra "Interatomic force constant of AII BIV C2V and AI BIII C2VI optoelectronic materials", Proc. SPIE 3749, 18th Congress of the International Commission for Optics, (19 July 1999); https://doi.org/10.1117/12.354871
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KEYWORDS
Plasmons

Optoelectronics

Semiconductors

Artificial intelligence

Metals

Plasma

Solids

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