Picosecond optical sampling method to measure S-parameter of microwave monolithic integrated circuit

Fuyun Lu; Shuzhong Yuan; Jiaqi Pan; Qi Gai; Yuanchao Zhao; Qingguo He

doi:10.1117/12.318448

10 August 1998 Picosecond optical sampling method to measure S-parameter of microwave monolithic integrated circuit

Fuyun Lu, Shuzhong Yuan, Jiaqi Pan, Qi Gai, Yuanchao Zhao, Qingguo He

Proceedings Volume 3558, Automated Optical Inspection for Industry: Theory, Technology, and Applications II; (1998) https://doi.org/10.1117/12.318448
Event: Photonics China '98, 1998, Beijing, China

Abstract

The fundamental principles to measure S-parameter of microwave monolithic integrated circuit by photoconductive sampling technique has been reported. Photoconductive sampling technique has been used to measure the S-parameter of a wide-band low noise three-stage amplifier for the first time. The measurement results agree well with those measured by network analyzer. And a measurement band width of 100GHz has been achieved by photoconductive sampling technique.

Citation Download Citation

Fuyun Lu, Shuzhong Yuan, Jiaqi Pan, Qi Gai, Yuanchao Zhao, and Qingguo He "Picosecond optical sampling method to measure S-parameter of microwave monolithic integrated circuit", Proc. SPIE 3558, Automated Optical Inspection for Industry: Theory, Technology, and Applications II, (10 August 1998); https://doi.org/10.1117/12.318448

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