Effects of thermal annealing on ion-beam-sputtered SiO2 and TiO2 optical thin films

Markus Tilsch; Volker Scheuer; Theo T. Tschudi

doi:10.1117/12.279104

1 October 1997 Effects of thermal annealing on ion-beam-sputtered SiO₂ and TiO₂ optical thin films

Markus Tilsch, Volker Scheuer, Theo T. Tschudi

Proceedings Volume 3133, Optical Thin Films V: New Developments; (1997) https://doi.org/10.1117/12.279104
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

Ion beam sputtered SiO₂ and TiO₂ optical thin films are investigated. The optical properties absorption, light scattering and refractive index and the mechanical properties thickness, density and stress are studied directly after deposition and the posttreatment by isochromal annealing up to 300 degree(s)C. Absorption losses of SiO₂ single layers decrease under annealing. The corresponding extinction is reduced below 1 X 10^-6 at 514 nm. The dynamics of this process is investigated. The density which is higher than bulk density decreases, while the thickness increases. TiO₂ single layers show a more complex behavior under postannealing. At higher temperatures this behavior is dominated by crystallite growth in anatase and rutile modification. Compressive stress is reduced. The single layer results of both materials are compared with those of double layers and Fabry Perot multilayers. Differences in absorption are discussed. In double layer systems, lowest bulk extinction of TiO₂ is estimated with 1.5 X 10^-5 at 514 nm. An irreversible peak shift of Fabry Perot filters after annealing comes from changes in thickness and refractive index. The overall performance of multilayer systems can be improved by an adapted annealing procedure.

Citation Download Citation

Markus Tilsch, Volker Scheuer, and Theo T. Tschudi "Effects of thermal annealing on ion-beam-sputtered SiO₂ and TiO₂ optical thin films", Proc. SPIE 3133, Optical Thin Films V: New Developments, (1 October 1997); https://doi.org/10.1117/12.279104

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