Metrology development on latent images via critical-dimension resonant soft x-ray scattering

Qi Zhang; Weilun Chao; Warren Holcomb; Ryan Miyakawa; Ricardo Ruiz; Dinesh Kumar; Andrew Neureuther; Patrick Naulleau; Cheng Wang

doi:10.1117/12.2689943

22 November 2023 Metrology development on latent images via critical-dimension resonant soft x-ray scattering

Qi Zhang, Weilun Chao, Warren Holcomb, Ryan Miyakawa, Ricardo Ruiz, Dinesh Kumar, Andrew Neureuther, Patrick Naulleau, Cheng Wang

Author Affiliations +

Proceedings Volume PC12750, International Conference on Extreme Ultraviolet Lithography 2023; PC1275012 (2023) https://doi.org/10.1117/12.2689943
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Conference Poster

Abstract

Metrology plays a crucial role in semiconductor manufacturing by providing accurate and precise measurement and characterization of critical parameters. With the development of high-resolution extreme ultraviolet (EUV) lithography processes, critical dimensions are shrinking to sub-10 nanometer. The small differences in chemistry between the exposed and unexposed regions of the resists make it extremely challenging to characterize the latent images with sub-nanometer precision. Here we report on our recent results using critical-dimension resonant soft x-ray scattering (CD-RSoXS) to probe the scattering behavior of latent images at specific energy levels. RSoXS leverages tunable soft x-ray sources in order to dramatically enhance the scattering cross sections from heterogeneous materials, which can provide valuable insights into the sub-nm spatial resolution and local chemical sensitivity simultaneously. Moreover, to extract a detailed profile of the latent image, the simulations of the form factor and subsequent reconstruction of the line shapes are performed under DWBA and RCWA.

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Qi Zhang, Weilun Chao, Warren Holcomb, Ryan Miyakawa, Ricardo Ruiz, Dinesh Kumar, Andrew Neureuther, Patrick Naulleau, and Cheng Wang "Metrology development on latent images via critical-dimension resonant soft x-ray scattering", Proc. SPIE PC12750, International Conference on Extreme Ultraviolet Lithography 2023, PC1275012 (22 November 2023); https://doi.org/10.1117/12.2689943

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