Photocurrent modulation in a multilayer molybdenum ditelluride transistor

Muhammad Atif Khan; Danial Khan; Amit Kumar Goyal; Yehia Massoud

doi:10.1117/12.2687569

28 November 2023 Photocurrent modulation in a multilayer molybdenum ditelluride transistor

Muhammad Atif Khan, Danial Khan, Amit Kumar Goyal, Yehia Massoud

Proceedings Volume 12764, Optoelectronic Devices and Integration XII; 127641K (2023) https://doi.org/10.1117/12.2687569
Event: SPIE/COS Photonics Asia, 2023, Beijing, China

Conference Poster

Abstract

We have fabricated a phototransistor based on multilayer MoTe2 and investigated its optical response. Under dark, the transistor exhibits ambipolar behavior with an on-off ratio of around 1000 for hole transport. The photocurrent of the transistor is modulated by illuminating the transistor with laser light and varying its power and the electrostatic gate voltage. We investigated the correlation between the laser power and the on/off ratio, photocurrent, and maximum current of the device. Finally, we analyzed the regions in the transfer curve that are least sensitive and most sensitive to incident laser light.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Muhammad Atif Khan, Danial Khan, Amit Kumar Goyal, and Yehia Massoud "Photocurrent modulation in a multilayer molybdenum ditelluride transistor", Proc. SPIE 12764, Optoelectronic Devices and Integration XII, 127641K (28 November 2023); https://doi.org/10.1117/12.2687569

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