Coater/developer-based techniques to achieve tight pitches towards high-NA EUV

Kanzo Kato; Lior Huli; Nathan Antonovich; David Hetzer; Steven Grzeskowiak; Eric Liu; Akiteru Ko; Satoru Shimura; Shinichiro Kawakami; Takahiro Kitano; Seiji Nagahara; Luciana Meli; Indira Seshadri; Martin Burkhardt; Karen Petrillo

doi:10.1117/12.2657290

30 April 2023 Coater/developer-based techniques to achieve tight pitches towards high-NA EUV

Kanzo Kato, Lior Huli, Nathan Antonovich, David Hetzer, Steven Grzeskowiak, Eric Liu, Akiteru Ko, Satoru Shimura, Shinichiro Kawakami, Takahiro Kitano, Seiji Nagahara, Luciana Meli, Indira Seshadri, Martin Burkhardt, Karen Petrillo

Author Affiliations +

Proceedings Volume 12498, Advances in Patterning Materials and Processes XL; 1249821 (2023) https://doi.org/10.1117/12.2657290
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Conference Poster

Abstract

As the semiconductor industry continues to push the limits of integrated circuit fabrication, reliance on extreme ultraviolet lithography (EUVL) has increased. Additionally, it has become clear that new techniques and methods are needed to mitigate pattern defectivity and roughness at lithography and etching and eliminate film-related defects. These approaches require further improvements to the process chemicals and the lithography process equipment to achieve finer patterns [1]. This paper reviews the ongoing progress in coater/developer processes to enable EUV patterning with sub-30 nm line and space and sub-40 nm pillars by using metal oxide resist (MOR). We show that combining new material with optimized illumination and processes helped reduce the minimum critical dimension size, defectivity, and roughness

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Kanzo Kato, Lior Huli, Nathan Antonovich, David Hetzer, Steven Grzeskowiak, Eric Liu, Akiteru Ko, Satoru Shimura, Shinichiro Kawakami, Takahiro Kitano, Seiji Nagahara, Luciana Meli, Indira Seshadri, Martin Burkhardt, and Karen Petrillo "Coater/developer-based techniques to achieve tight pitches towards high-NA EUV", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 1249821 (30 April 2023); https://doi.org/10.1117/12.2657290

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