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17 March 2023 Progress and perspectives of nonvolatile memory devices based on antiferromagnetic metals
Pedram Khalili
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Proceedings Volume PC12430, Quantum Sensing and Nano Electronics and Photonics XIX; PC124300I (2023) https://doi.org/10.1117/12.2649583
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
We present recent advances in the development of magnetic memory devices based on antiferromagnetic (AFM) materials. We show strategies for electrical control of the magnetic order (i.e., writing of information) in AFM materials using spin-orbit torque, and discuss their experimental demonstration in devices based on multiple AFM metals [1, 2]. We then discuss perspectives for electrical readout of information from AFM materials, which, due to the absence of a net macroscopic magnetization, has long been considered impractical. This is a grand challenge requiring new approaches to the realization of large magnetoresistive (MR) effects in tunnel junctions involving AFM thin films, where electrical reading and writing operations can be integrated for memory and computing applications. We will discuss recent theoretical proposals and experimental progress in the development of such devices. [1] Shi et al., Nature Electron., 3, 92 (2020) [2] Arpaci et al., Nature Comm., 12, 3828 (2021)
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Pedram Khalili "Progress and perspectives of nonvolatile memory devices based on antiferromagnetic metals", Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC124300I (17 March 2023); https://doi.org/10.1117/12.2649583
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KEYWORDS
Metals
Magnetism
Atomic force microscopy
Control systems
Thin films
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