Design and optimization of NUV-enhanced 4H-SiC separate-absorption-charge-multiplication avalanche photodiodes

Jonathan Schuster; Anand V. Sampath; Jeremy L. Smith; Stephen B. Kelley; Gregory A. Garrett; Daniel B. Habersat; Michael A. Derenge; Michael Wraback; Dina M. Bower; Shahid Aslam; Tilak Hewagama

doi:10.1117/12.2649236

10 March 2023 Design and optimization of NUV-enhanced 4H-SiC separate-absorption-charge-multiplication avalanche photodiodes

Jonathan Schuster, Anand V. Sampath, Jeremy L. Smith, Stephen B. Kelley, Gregory A. Garrett, Daniel B. Habersat, Michael A. Derenge, Michael Wraback, Dina M. Bower, Shahid Aslam, Tilak Hewagama

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Proceedings Volume 12415, Physics and Simulation of Optoelectronic Devices XXXI; 1241509 (2023) https://doi.org/10.1117/12.2649236
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

High sensitivity near-ultraviolet (NUV) avalanche photodiodes operating at wavelengths longer than 300 nm are useful for various applications, including surface exploration of Ocean Worlds and other planetary bodies via Raman spectroscopy. 4H-SiC has long been established as a proven UV detector technology; however, the responsivity of 4H–SiC avalanche photodiodes (APDs) diminishes dramatically at wavelengths longer than ≈ 280 nm due to its weak absorption at wavelengths approaching the indirect bandgap. The authors will present on the design and optimization of 4H-SiC separate absorption, charge and multiplication (SACM) APDs for broadband absorption from 266 to 340 nm.

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Jonathan Schuster, Anand V. Sampath, Jeremy L. Smith, Stephen B. Kelley, Gregory A. Garrett, Daniel B. Habersat, Michael A. Derenge, Michael Wraback, Dina M. Bower, Shahid Aslam, and Tilak Hewagama "Design and optimization of NUV-enhanced 4H-SiC separate-absorption-charge-multiplication avalanche photodiodes", Proc. SPIE 12415, Physics and Simulation of Optoelectronic Devices XXXI, 1241509 (10 March 2023); https://doi.org/10.1117/12.2649236

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