Paper
27 March 2022 A closed form analytical model for threshold switching mechanism of chalcogenide-based devices
Chunsheng Jiang, Xingchen Xin, Hongying Chen
Author Affiliations +
Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 121699Z (2022) https://doi.org/10.1117/12.2625793
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China
Abstract
In this work, an analytical current-voltage (I-V) model of chalcogenide-based devices has been proposed by solving the thermally assisted hopping conduction and energy transfer equations. The subthreshold current and threshold voltage could be predicted by this model. Next, the well-known and experimental linear relationship between threshold voltage and thickness of chalcogenide glass has been deduced from the analytical model directly and the underlying physics of threshold switching is also elaborated according to the model. Besides, the constant-power condition of threshold switching point is also derived from the proposed model. The calculated results from the analytical model agree well with the numerical calculation. The proposed model can help in the design optimization and simulation of nanoscale phase-change memories, relaxation oscillations, and steep slope transistors based on chalcogenide glass materials.
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Chunsheng Jiang, Xingchen Xin, and Hongying Chen "A closed form analytical model for threshold switching mechanism of chalcogenide-based devices", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 121699Z (27 March 2022); https://doi.org/10.1117/12.2625793
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KEYWORDS
Switching

Chalcogenide glass

Physics

Electronics

Energy transfer

Optimization (mathematics)

Thermal modeling

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