CMOS compatible design of photonic nanojet

Aneesh Vincent Veluthandath; Ganapathy Senthil Murugan

doi:10.1117/12.2624336

24 May 2022 CMOS compatible design of photonic nanojet

Aneesh Vincent Veluthandath, Ganapathy Senthil Murugan

Proceedings Volume 12152, Mesophotonics: Physics and Systems at Mesoscale; 1215203 (2022) https://doi.org/10.1117/12.2624336
Event: SPIE Photonics Europe, 2022, Strasbourg, France

Abstract

PNJs are non-resonant travelling beams with applications in enhanced Raman scattering, coupled resonator optical waveguide, high resolution microscopy, lithography and nonlinear optics. The length and beam width of the PNJ can be controlled by engineering the shape of the dielectric structure as well as by changing the refractive index contrast between the particle and the surrounding medium. The waist of PNJ moves towards the diffracting particle with increase in refractive index, and for refractive indices higher than 2, the waist is inside the particle. This migration of beam waist towards the interior of the particle is the biggest hurdle in on chip PNJ generation, because many CMOS compatible materials, including Silicon has refractive index higher than 2. In this study, we present the design and computational results of a photonic chip made of Silicon that can support PNJ outside the material boundary. We have studied the characteristics of PNJ including the width and length as well as the effect of surrounding medium.

Conference Presentation

Citation Download Citation

Aneesh Vincent Veluthandath and Ganapathy Senthil Murugan "CMOS compatible design of photonic nanojet", Proc. SPIE 12152, Mesophotonics: Physics and Systems at Mesoscale, 1215203 (24 May 2022); https://doi.org/10.1117/12.2624336

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