Investigation of the influence of the parameters of the temporary bonding and thinning operations on the bending of silicon wafers

N. A. Djuzhev; M. A. Makhiboroda; E. E. Gusev; M. U. Fomichev; A. A. Dedkova; P. S. Ivanin

doi:10.1117/12.2623584

30 January 2022 Investigation of the influence of the parameters of the temporary bonding and thinning operations on the bending of silicon wafers

N. A. Djuzhev, M. A. Makhiboroda, E. E. Gusev, M. U. Fomichev, A. A. Dedkova, P. S. Ivanin

Author Affiliations +

Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 1215712 (2022) https://doi.org/10.1117/12.2623584
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation

Abstract

This paper shows the result of working out the operations of temporary bonding of Si-Si wafers and Si-glass wafers. The influence of materials and parameters of technological operations on the warpage of the resulting structures was investigated in order to reduce the bending of the device wafer when performing the processes of temporary bonding and thinning.

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N. A. Djuzhev, M. A. Makhiboroda, E. E. Gusev, M. U. Fomichev, A. A. Dedkova, and P. S. Ivanin "Investigation of the influence of the parameters of the temporary bonding and thinning operations on the bending of silicon wafers", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 1215712 (30 January 2022); https://doi.org/10.1117/12.2623584

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