Fabrication and characterization of 4H-SiC APDs for high-temperature ultraviolet detection applications

X.-Y. Zhou; X. Tan; Y.-J. Lv; Y.-G. Wang; Y.-D. Jiao; S.-J. Cai; Z.-H. Feng

doi:10.1117/12.2619864

27 March 2022 Fabrication and characterization of 4H-SiC APDs for high-temperature ultraviolet detection applications

X.-Y. Zhou, X. Tan, Y.-J. Lv, Y.-G. Wang, Y.-D. Jiao, S.-J. Cai, Z.-H. Feng

Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 121690K (2022) https://doi.org/10.1117/12.2619864
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China

Abstract

In this work, 4H-SiC avalanche photodiodes (APDs) were fabricated and investigated both in linear and Geiger modes for high-temperature ultraviolet (UV) detection applications. With the temperature varying from 300 K to 425 K, the avalanche breakdown voltage of our 4H-SiC APDs keeps very stable with a small temperature coefficient of <8 mV/K. In the Geiger mode, the impact of temperature on the output signal pulse height, dark count rate (DCR) and single-photon-detection efficiency (SPDE) is analyzed from the aspect of device physics. At a fixed bias voltage of 166.5 V, the DCR and SPDE at 300 K, 375 K and 425 K are 5.3 Hz∙μm^-2 /15.6%, 11.8 Hz∙μm^-2 /17% and 16.5 Hz∙μm^-2 /15.7%, respectively. The results in this work demonstrate that our fabricated 4H-SiC APDs can operate stably and reliably under the conditions with a high temperature.

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X.-Y. Zhou, X. Tan, Y.-J. Lv, Y.-G. Wang, Y.-D. Jiao, S.-J. Cai, and Z.-H. Feng "Fabrication and characterization of 4H-SiC APDs for high-temperature ultraviolet detection applications", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 121690K (27 March 2022); https://doi.org/10.1117/12.2619864

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