Presentation + Paper
3 March 2022 Electrically pumped epitaxially regrown λ > 2 μm GaSb-based photonic crystal surface-emitting lasers
Leon Shterengas, R. Liu, G. Kipshidze, A. Stein, Wonjae Lee, Dmitri N Zakharov, Kim Kisslinger, Gregory Belenky
Author Affiliations +
Proceedings Volume 12021, Novel In-Plane Semiconductor Lasers XXI; 120210B (2022) https://doi.org/10.1117/12.2615741
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Photonic crystal surface emitting lasers emitting up to 2.6 µm have been designed and fabricated. A high-index-contrast photonic crystal layer was incorporated into the laser heterostructure by air-hole-retaining epitaxial regrowth. Transmission electron microscopy studies demonstrated uniform and continuous regrowth of the nano-patterned GaSb surface with AlGaAsSb alloy until air-pockets start being formed. The photonic crystal surface emitting lasers based on diode laser and cascade diode laser heterostructures generated narrow spectrum low divergence beams with mW-level output power. The angle-resolved electroluminescence analysis demonstrated well resolved photonic subbands corresponding to Γ2 point of square lattice and photonic gaps of several meV.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leon Shterengas, R. Liu, G. Kipshidze, A. Stein, Wonjae Lee, Dmitri N Zakharov, Kim Kisslinger, and Gregory Belenky "Electrically pumped epitaxially regrown λ > 2 μm GaSb-based photonic crystal surface-emitting lasers", Proc. SPIE 12021, Novel In-Plane Semiconductor Lasers XXI, 120210B (3 March 2022); https://doi.org/10.1117/12.2615741
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KEYWORDS
Photonic crystals

Semiconductor lasers

Quantum wells

Etching

Electroluminescence

Gallium antimonide

Transmission electron microscopy

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