Investigation of low-n mask in 0.33 NA EUV single patterning at pitch 28nm metal design

Dongbo Xu; Werner Gillijns; Ling Ee Tan; Vicky Philipsen; Ryoung-Han Kim

doi:10.1117/12.2614197

26 May 2022 Investigation of low-n mask in 0.33 NA EUV single patterning at pitch 28nm metal design

Dongbo Xu, Werner Gillijns, Ling Ee Tan, Vicky Philipsen, Ryoung-Han Kim

Proceedings Volume 12051, Optical and EUV Nanolithography XXXV; 120510H (2022) https://doi.org/10.1117/12.2614197
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

Extending 0.33NA EUV single patterning to 28nm pitch becomes very challenging in terms of stochastic defectivity, which demands high contrast lithographic images. The low-n attenuated phase-shift mask (attPSM) can provide superior solutions for individual pitches by mitigating mask three-dimensional effects. The simulation and experiment results have shown substantial imaging improvements: higher depth of focus at similar normalized image log slope and smaller telecentricity error values than the best binary mask configuration. In this paper, the exploration of low-n attPSM patterning opportunity for pitch 28nm metal design is investigated. The lithographic performance of the low-n attPSM is compared to the standard binary Ta-based absorber mask. As well, the impact of mask tonality (bright-field vs. dark-field) on the pattern fidelity and process window is evaluated both by simulations and experiments.

Conference Presentation

Citation Download Citation

Dongbo Xu, Werner Gillijns, Ling Ee Tan, Vicky Philipsen, and Ryoung-Han Kim "Investigation of low-n mask in 0.33 NA EUV single patterning at pitch 28nm metal design", Proc. SPIE 12051, Optical and EUV Nanolithography XXXV, 120510H (26 May 2022); https://doi.org/10.1117/12.2614197

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