Presentation + Paper
12 October 2021 Sensitivity analysis based SEM measurement down-sampling approach for mask process modeling applications
Author Affiliations +
Abstract
Model-based Mask Process Correction (MPC) is an indispensable data processing step for producing masks for advanced wafer production nodes. Typically, calibration of an MPC model may require several thousands SEM measurements. However, due to metrology tool-time constraints, there is an increasing requirement to minimize the number of measurements for building an MPC model, without impacting the model quality significantly. This work presents the development of a down-sampling approach using a combination of sensitivity analysis and clustering to reduce a larger set of diverse measurement locations to a smaller subset according to the metrology budget of photomask engineers.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kushlendra Mishra, Rachit Sharma, Ingo Bork, Peter Buck, Dongeun Cha, Seungheon Na, Jaekwang Kim, Kiwook Park, and Inpyo Kim "Sensitivity analysis based SEM measurement down-sampling approach for mask process modeling applications", Proc. SPIE 11855, Photomask Technology 2021, 118550Z (12 October 2021); https://doi.org/10.1117/12.2600926
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Data modeling

Calibration

Photomasks

Process modeling

Statistical modeling

Scanning electron microscopy

Critical dimension metrology

RELATED CONTENT

Mask modeling using a deep learning approach
Proceedings of SPIE (September 26 2019)
Calibration of e-beam and etch models using SEM images
Proceedings of SPIE (September 23 2009)
Metrology limits of mask process development
Proceedings of SPIE (May 20 2006)

Back to Top