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1 August 2021 Temperature-dependent amplified spontaneous emission (ASE) threshold in phase-stable 3D perovskite films
Isabel Allegro, Yang Li, Bryce S. Richards, Ulrich W. Paetzold, Uli Lemmer, Ian A. Howard
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Proceedings Volume 11808, Organic and Hybrid Light Emitting Materials and Devices XXV; 118081B (2021) https://doi.org/10.1117/12.2593037
Event: SPIE Organic Photonics + Electronics, 2021, San Diego, California, United States
Abstract
Continuous-wave (CW) lasing and amplified spontaneous emission (ASE) in 3D perovskite films has only been demonstrated at cryogenic temperatures. To understand the temperature limits of CW ASE, we investigate the carrier dynamics and determine the bimolecular and Auger recombination constants from 80 K up to 290 K in phase-stable triple cation perovskites. The bimolecular rate coefficient decreases with increasing temperature, whereas the Auger rate coefficient remains unchanged from cryogenic to room temperature. Above 250 K, at the ASE threshold carrier density, Auger recombination dominates the carrier dynamics and thus limits the lasing operation. At lower temperatures, below 250 K, the dominant effects leading to an increased ASE threshold with temperature are the decrease in the radiative recombination rate and the increased energy dilution of the charge carriers. Both of these effects reduce the rate of spontaneous emission into the ASE band.
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Isabel Allegro, Yang Li, Bryce S. Richards, Ulrich W. Paetzold, Uli Lemmer, and Ian A. Howard "Temperature-dependent amplified spontaneous emission (ASE) threshold in phase-stable 3D perovskite films", Proc. SPIE 11808, Organic and Hybrid Light Emitting Materials and Devices XXV, 118081B (1 August 2021); https://doi.org/10.1117/12.2593037
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KEYWORDS
Perovskite
Cryogenics
Reflectance spectroscopy
Carrier dynamics
Continuous wave operation
Laser damage threshold
Refractive index
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