Presentation
22 February 2021 Increased OPC modeling accuracy of deformation effects in positive-tone development photoresists
Folarin Latinwo, Yulu Chen, Delian Yang, Rob DeLancey, Owen Huang, Kevin Lucas
Author Affiliations +
Abstract
PTD photoresists are still the main type of photoresists used for tight pitch layers in advanced patterning. Recent experimental results show evidence that the same mechanical deformation behaviors seen in NTD photoresist process also exist in PTD photoresist processes. These PTD photoresist deformation behaviors cause CD differences which significantly impact CD control budgets in modern technology nodes. Therefore, there is a strong need to accurately model PTD photoresist deformation effects in compact OPC models. In this paper we discuss the polymer physics relevant to physical deformation in PTD photoresists in comparison to NTD photoresists
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Folarin Latinwo, Yulu Chen, Delian Yang, Rob DeLancey, Owen Huang, and Kevin Lucas "Increased OPC modeling accuracy of deformation effects in positive-tone development photoresists", Proc. SPIE 11613, Optical Microlithography XXXIV, 116130F (22 February 2021); https://doi.org/10.1117/12.2584781
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KEYWORDS
Photoresist materials

Photoresist developing

Optical proximity correction

Optical lithography

Photoresist processing

Physics

Polymers

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