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PTD photoresists are still the main type of photoresists used for tight pitch layers in advanced patterning. Recent experimental results show evidence that the same mechanical deformation behaviors seen in NTD photoresist process also exist in PTD photoresist processes. These PTD photoresist deformation behaviors cause CD differences which significantly impact CD control budgets in modern technology nodes. Therefore, there is a strong need to accurately model PTD photoresist deformation effects in compact OPC models. In this paper we discuss the polymer physics relevant to physical deformation in PTD photoresists in comparison to NTD photoresists
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Folarin Latinwo, Yulu Chen, Delian Yang, Rob DeLancey, Owen Huang, Kevin Lucas, "Increased OPC modeling accuracy of deformation effects in positive-tone development photoresists," Proc. SPIE 11613, Optical Microlithography XXXIV, 116130F (22 February 2021); https://doi.org/10.1117/12.2584781