Memory OPO improvement using novel target design

Eitan Hajaj; Honggoo Lee; Chanha Park; Sangho Lee; Dongyoung Lee; Dohwa Lee; Dongsoo Kim; Sanghuck Jeon; Dongsub Choi; Eltsafon Ashwal; Chen Dror; Raviv Yohanan; Zephyr Liu; xiaolei liu; Diana Shaphirov; Katya Gordon; Mark Ghinovker

doi:10.1117/12.2584524

22 February 2021 Memory OPO improvement using novel target design

Eitan Hajaj, Honggoo Lee, Chanha Park, Sangho Lee, Dongyoung Lee, Dohwa Lee, Dongsoo Kim, Sanghuck Jeon, Dongsub Choi, Eltsafon Ashwal, Chen Dror, Raviv Yohanan, Zephyr Liu, xiaolei liu, Diana Shaphirov, Katya Gordon, Mark Ghinovker

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Proceedings Volume 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV; 1161137 (2021) https://doi.org/10.1117/12.2584524
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

Reduction in on product overlay (OPO) is a key component for high-end, high yield integrated circuit manufacturing. Due to the continually shrinking dimensions of the IC device elements it has become near-impossible to measure overlay on the device itself, driving the need to perform overlay measurements on dedicated overlay targets. In order to enable accurate measurement on grid (target) in terms of OPO matching, the overlay mark must be as similar as possible to the device in order to mimic the process impact on the device. Imaging-based optical overlay (IBO) provides the best accuracy and robustness for overlay metrology measurements for many process layers. To further optimize IBO performance, a new robust AIM (rAIM™) IBO target design was developed, using the Moiré effect. rAIM is implemented using significantly smaller pitches compared with the standard AIM® target, hence providing a more device-like target design. This new target design has the potential to improve target accuracy and robustness, to improve measurability, and to meet overlay basic performance requirements, such as total measurement uncertainty (TMU).

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Eitan Hajaj, Honggoo Lee, Chanha Park, Sangho Lee, Dongyoung Lee, Dohwa Lee, Dongsoo Kim, Sanghuck Jeon, Dongsub Choi, Eltsafon Ashwal, Chen Dror, Raviv Yohanan, Zephyr Liu, xiaolei liu, Diana Shaphirov, Katya Gordon, and Mark Ghinovker "Memory OPO improvement using novel target design", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 1161137 (22 February 2021); https://doi.org/10.1117/12.2584524

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KEYWORDS

Overlay metrology

Optical parametric oscillators

Integrated circuits

Manufacturing

Standards development

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