As 3D NAND devices increase memory density by adding layers, scaling and increasing bits-per-cell, new overlay (OVL) metrology challenges arise. On product overlay (OPO) may decrease for critical thick layers such as thick deck-to-deck alignment, whereas high aspect ratio (Z-axis) structures introduce stress, tilt and deformation that require accurate and robust OVL measurements. Advanced imaging metrology (AIM®) targets, that consist of two side-byside periodic gratings in the previous and current layers, are typically used to measure OVL with Imaging Based Overlay (IBO) metrology systems. In this paper, we present a new approach that utilizes the Talbot effect in AIM to produce multiple contrast planes along the Z-axis, which enables a common focus position for both layers at a similar focus plane, resulting in improved measurement robustness. We will present Talbot effect theory, target design steps by metrology target design (MTD) simulator, actual measurement results on an advanced 3D NAND device and conclusions for such targets.
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