Maxime Giteau,1 Cyprien Drommi,1 François Challet,2 Hassanet Sodabanlu,1 Hamidreza Esmaielpourhttps://orcid.org/0000-0002-9432-8861,3 Marc Bescond,4 Daniel Suchet,3 Stéphane Collin,5 Jean-François Guillemoles,6 Yoshitaka Okada1
1Research Ctr. for Advanced Science and Technology, The Univ. of Tokyo (Japan) 2Institute of Industrial Science, The Univ. of Tokyo (Japan) 3Institut Photovoltaïque d'Ile-de-France (France) 4LIMMS, Institute of Industrial Science, The Univ. of Tokyo (Japan) 5Ctr. de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Univ. Paris-Saclay (France) 6CNRS, Institut Photovoltaïque d'Ile-de-France (France)
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Hot-carrier solar cells could overcome the Shockley-Queisser limit by having electrons and holes at a higher temperature than the lattice. To generate these hot carriers under concentrated sunlight, the thermalization rate should be as low as possible. Our objective in this presentation is to quantify the influence of different thermalization mechanisms. We determine the carrier temperature in ultrathin GaAs absorbers using continuous-wave photoluminescence and identify distinct surface and volume thermalization contributions. We explain the origin of these contributions using theoretical models involving non-equilibrium LO phonon populations and thermionic emission. We implement these mechanisms in detailed balance calculations for further understanding.
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Maxime Giteau, Cyprien Drommi, François Challet, Hassanet Sodabanlu, Hamidreza Esmaielpour, Marc Bescond, Daniel Suchet, Stéphane Collin, Jean-François Guillemoles, Yoshitaka Okada, "Understanding the cooling mechanisms of hot carriers in ultrathin GaAs layers," Proc. SPIE 11681, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices X, 116810O (5 March 2021); https://doi.org/10.1117/12.2578992