Physical properties of low threshold current 1.25-μm type-II GaInAs/GaAsSb "W"-lasers

Dominic A. Duffy; Igor P. Marko; Timothy D. Eales; Christian Fuchs; Jannik Lehr; Wolfgang Stolz; Stephen J. Sweeney

doi:10.1117/12.2577808

5 March 2021 Physical properties of low threshold current 1.25-μm type-II GaInAs/GaAsSb "W"-lasers

Dominic A. Duffy, Igor P. Marko, Timothy D. Eales, Christian Fuchs, Jannik Lehr, Wolfgang Stolz, Stephen J. Sweeney

Proceedings Volume 11705, Novel In-Plane Semiconductor Lasers XX; 117050G (2021) https://doi.org/10.1117/12.2577808
Event: SPIE OPTO, 2021, Online Only

Abstract

Type-II GaInAs/GaAsSb “W” quantum well heterostructures on GaAs show strong potential for temperature-stable data communications lasers. Devices emitting at 1255 nm show promising lasing characteristics including room-temperature threshold current densities, Jth < 300 A/cm^2, pulsed output powers >1 W, and a reduced wavelength temperature dependence of 0.31 nm/C. Temperature- and pressure-dependent characterisation techniques are used to determine the roles of radiative and non-radiative recombination. Analysis of these characteristics suggest a reduced influence of non-radiative recombination on the thermal stability of type-II “W”-lasers compared to type-I devices, as will be discussed along with recommendations for future device development.

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Dominic A. Duffy, Igor P. Marko, Timothy D. Eales, Christian Fuchs, Jannik Lehr, Wolfgang Stolz, and Stephen J. Sweeney "Physical properties of low threshold current 1.25-μm type-II GaInAs/GaAsSb "W"-lasers", Proc. SPIE 11705, Novel In-Plane Semiconductor Lasers XX, 117050G (5 March 2021); https://doi.org/10.1117/12.2577808

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