Presentation
5 March 2021 Mid-IR lasers epitaxially grown on on-axis (001) Silicon
Eric Tournié, Marta Rio Calvo, Laura Monge-Bartolome, Zeineb Loghmari, Daniel A. Diaz-Thomas, Guilhem Boissier, Ariane Meguekam, Michaël Bahriz, Roland Teissier, Alexei N. Baranov, Laurent Cerutti, Jean-Baptiste Rodriguez
Author Affiliations +
Abstract
The integration of mid-IR lasers with Si-based platforms is needed for the development of smart sensor grids. Here we review our recent results on laser diodes (LDs), interband-cascade lasers (ICLs) and quantum-cascade lasers (QCLs), all grown on on-axis (001) Si substrates and covering emission wavelengths from 2 to 10 µm. In addition, we will demonstrate that etching facets is a viable route toward cavity definition either on plain wafers or recessed Si wafers.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric Tournié, Marta Rio Calvo, Laura Monge-Bartolome, Zeineb Loghmari, Daniel A. Diaz-Thomas, Guilhem Boissier, Ariane Meguekam, Michaël Bahriz, Roland Teissier, Alexei N. Baranov, Laurent Cerutti, and Jean-Baptiste Rodriguez "Mid-IR lasers epitaxially grown on on-axis (001) Silicon", Proc. SPIE 11705, Novel In-Plane Semiconductor Lasers XX, 1170512 (5 March 2021); https://doi.org/10.1117/12.2576790
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KEYWORDS
Semiconductor lasers

Silicon

Mid-IR

Semiconducting wafers

Etching

Quantum cascade lasers

Smart sensors

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