Inductively coupled plasma (ICP) dry etching of type II InAs/GaSb superlattice for focal plane arrays

Fei Tao; Xubo Zhu; JinChun Wang; Yingjie He; Jiaxin Ding; Guansheng Yao; Lixue Zhang; Xiancun Cao; Yanqiu Lv

doi:10.1117/12.2575638

5 November 2020 Inductively coupled plasma (ICP) dry etching of type II InAs/GaSb superlattice for focal plane arrays

Fei Tao, Xubo Zhu, JinChun Wang, Yingjie He, Jiaxin Ding, Guansheng Yao, Lixue Zhang, Xiancun Cao, Yanqiu Lv

Proceedings Volume 11565, AOPC 2020: Display Technology; Photonic MEMS, THz MEMS, and Metamaterials; and AI in Optics and Photonics; 115650I (2020) https://doi.org/10.1117/12.2575638
Event: Applied Optics and Photonics China (AOPC 2020), 2020, Beijing, China

Abstract

Infrared(IR)photo detectors based on InAs/GaSb type II superlattice have developed quickly in recent years. Many groups show great interest in InAs/GaSb superlattice detector for its superiors as high quantum efficient, high working temperature, high uniformity and low dark current densities. Inductively coupled plasma(ICP) etching of GaSb and InAs/ GaSb superlattices were performed using Cl₂/Ar/CH₄/H₂. This paper introduceste inductively coupled plasma( ICP) etching of Inas/GaSb with SiO₂ mask by the Cl₂/Ar/CH₄/H₂ mixed-gas process. The effects of process parameters such as gas combination, ICP and RF power on the etch rate and quality of InAs/GaSb It is found that the ratio of Cl₂ flow rate significantly affects the etch rate, due to the trade-off between physical and chemical component of etching. The etch rate of InAs/GaSb increases with the increase of percent of Cl₂, there will InClx remains in the etching channel when the etching depth exceeded 2μm, which can stop the etching going on. This phenomenon can be eliminated by decrease the Cl₂ ratio,to make sure the etching depth reach 6μm under a certain low etching rate. The surface morphology and SEM of the superlattice material after etching shows that dry etching morphology is better than wet etching.After the electrode is grown, the superlattice chip have a good diode characteristic curve.

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Fei Tao, Xubo Zhu, JinChun Wang, Yingjie He, Jiaxin Ding, Guansheng Yao, Lixue Zhang, Xiancun Cao, and Yanqiu Lv "Inductively coupled plasma (ICP) dry etching of type II InAs/GaSb superlattice for focal plane arrays", Proc. SPIE 11565, AOPC 2020: Display Technology; Photonic MEMS, THz MEMS, and Metamaterials; and AI in Optics and Photonics, 115650I (5 November 2020); https://doi.org/10.1117/12.2575638

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KEYWORDS

Etching

Chlorine

Superlattices

Dry etching

Gallium antimonide

Sensors

Plasma etching

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