Presentation + Paper
4 January 2021 Tomorrow’s pitches on today’s 0.33 NA scanner: pupil and imaging conditions to print P24 L/S and P28 contact holes
Author Affiliations +
Abstract
We demonstrate P24 line/space and P28 contact hole printing on wafer using a NXE:3400B EUV scanner. The goal is to enable ecosystem development towards high-NA in a Fab-like environment. We allow for pupil fill ratios down to 6% (illumination efficiency ~35%) and use fading correction by induced lens aberrations. We show that the dose sensitivity for P24 L/S can be improved by more than 30% compared to a standard (leaf-shaped dipole) pupil. For contact holes, both single expose and double L/S expose schemes print contact holes at pitch 28nm in metal oxide resist (NTD), albeit at very different dose.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joern-Holger Franke, Natalia Davydova, Joost Bekaert, Vincent Wiaux, Vineet Vijayakrishnan Nair, Andre van Dijk, Erik Wang, Mark Maslow, and Eric Hendrickx "Tomorrow’s pitches on today’s 0.33 NA scanner: pupil and imaging conditions to print P24 L/S and P28 contact holes", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 1151716 (4 January 2021); https://doi.org/10.1117/12.2573073
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Scanners

Extreme ultraviolet lithography

Etching

Metrology

Photomasks

Image quality

Semiconducting wafers

Back to Top