A possible wafer heating during EUV exposure

Se-Hun Oh; Sung-Gyu Lee; Jae-Hun Park; Chung-Hyun Ban; Hye-Keun Oh

doi:10.1117/12.2502918

11 October 2018 A possible wafer heating during EUV exposure

Se-Hun Oh, Sung-Gyu Lee, Jae-Hun Park, Chung-Hyun Ban, Hye-Keun Oh

Proceedings Volume 10809, International Conference on Extreme Ultraviolet Lithography 2018; 108091R (2018) https://doi.org/10.1117/12.2502918
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

Extreme ultraviolet (EUV) lithography is the most promising candidate for sub-1x nm pattering. CO2 laser irradiates to a Sn droplet and then, EUV radiation can be emitted. In this process, infrared radiation (IR) is simultaneously emitted 3 to 5 times more than EUV radiation. In order to suppress IR, spectral purity filter (SPF) [8] at collector mirror and dynamic gas lock (DGL) [4] are used. Nevertheless, some amount of IR still reaches to the wafer and it can lead to wafer heating issue, so that we investigated temperature and deformation of the wafer by using finite element method (FEM) simulation. Two different silicon wafer types are compared. There is a difference in temperature and deformation between single layered wafer with and without the bottom chuck. We also found that the temperature increased more with added stacks like hard mask or photoresist on the top of the wafer.

Citation Download Citation

Se-Hun Oh, Sung-Gyu Lee, Jae-Hun Park, Chung-Hyun Ban, and Hye-Keun Oh "A possible wafer heating during EUV exposure", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108091R (11 October 2018); https://doi.org/10.1117/12.2502918

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KEYWORDS

Extreme ultraviolet

Infrared radiation

Semiconducting wafers

Extreme ultraviolet lithography

Finite element methods

EUV optics

Lithography

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