Optimized plasma etch window of block copolymers and neutral brush layers for enhanced direct self-assembly pattern transfer into a hardmask layer

Nickolas Brakensiek; Kui Xu; Daniel Sweat; Mary Ann Hockey

doi:10.1117/12.2297456

20 March 2018 Optimized plasma etch window of block copolymers and neutral brush layers for enhanced direct self-assembly pattern transfer into a hardmask layer

Nickolas Brakensiek, Kui Xu, Daniel Sweat, Mary Ann Hockey

Author Affiliations +

Proceedings Volume 10589, Advanced Etch Technology for Nanopatterning VII; 105890S (2018) https://doi.org/10.1117/12.2297456
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

Directed self-assembly (DSA) of block copolymers (BCPs) is one of the most promising patterning technologies for future lithography nodes. However, one of the biggest challenges to DSA is the pattern transfer by plasma etching from BCP to hardmask (HM) because the etch selectivity between BCP and neutral brush layer underneath is usually not high enough to enable robust pattern transfer. This paper will explore the plasma etch conditions of both BCPs and neutral brush layers that may improve selectivity and allow a more robust pattern transfer of DSA patterns into the hardmask layer. The plasma etching parameters that are under investigation include the selection of oxidative or reductive etch chemistries, as well as plasma gas pressure, power, and gas mixture fractions. Investigation into the relationship between BCP/neutral brush layer materials with varying chemical compositions and the plasma etching conditions will be highlighted. The culmination of this work will demonstrate important etch parameters that allow BCPs and neutral brush layers to be etched into the underlying hardmask layer with a large process window.

Citation Download Citation

Nickolas Brakensiek, Kui Xu, Daniel Sweat, and Mary Ann Hockey "Optimized plasma etch window of block copolymers and neutral brush layers for enhanced direct self-assembly pattern transfer into a hardmask layer", Proc. SPIE 10589, Advanced Etch Technology for Nanopatterning VII, 105890S (20 March 2018); https://doi.org/10.1117/12.2297456

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KEYWORDS

Etching

Carbon monoxide

Chemistry

Plasma etching

Oxygen

Directed self assembly

Plasma

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