1180 nm GaInNAs quantum well based high power DBR laser diodes

Jukka Viheriälä; Antti T. Aho; Heikki Virtanen; Mervi Koskinen; Michael Dumitrescu; Mircea Guina

doi:10.1117/12.2251317

24 February 2017 1180 nm GaInNAs quantum well based high power DBR laser diodes

Jukka Viheriälä, Antti T. Aho, Heikki Virtanen, Mervi Koskinen, Michael Dumitrescu, Mircea Guina

Proceedings Volume 10086, High-Power Diode Laser Technology XV; 100860K (2017) https://doi.org/10.1117/12.2251317
Event: SPIE LASE, 2017, San Francisco, California, United States

Abstract

We report state-of-the-art results for 1180nm (narrow linewidth) laser diodes based on GaInNAs quantum wells and show results for ridge waveguide DBR laser diode including its reliability tests. Manuscript demonstrates 500 mW output power in continuous-wave operation at room temperature, wide single mode tuning region and narrow linewidth operation. Devices reached narrow linewidth operation (>250 kHz) across their operation band.

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Citation Download Citation

Jukka Viheriälä, Antti T. Aho, Heikki Virtanen, Mervi Koskinen, Michael Dumitrescu, and Mircea Guina "1180 nm GaInNAs quantum well based high power DBR laser diodes", Proc. SPIE 10086, High-Power Diode Laser Technology XV, 100860K (24 February 2017); https://doi.org/10.1117/12.2251317

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