Dynamic Stark effect in semiconductors: high-speed modulation

Nasser Peyghambarian; Stephan W. Koch; Bernhard O. Seraphin

doi:10.1117/12.20868

1 August 1990 Dynamic Stark effect in semiconductors: high-speed modulation

Nasser Peyghambarian, Stephan W. Koch, Bernhard O. Seraphin

Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20868
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Laser excitation above the bandgap of semiconductor materials like GaAs creates a high density of electrons and holes. These quasi particles form a quantum mechanical system in which optical nonlinearities arise as a result of many-body effects such as screening of the Coulomb potential, reduction of the bandgap, and filling of the band and of the states.' The refractive index change resulting from such processes may be employed to demonstrate a variety of devices such as nonlinear switches, modulators, and logic gates. These optical nonlinearities may be measured using various techniques such as four-wave mixing, interferometry, and modulation spectroscopy. In the latter technique, an analogy is established to the electroreflectance effect2'3 in which the optical properties of a semiconductor are modulated by the application of a low-frequency electric field. In the experiment reported here, the modulating element is the E-field of the pump beam. At a much higher frequency than in electroreflectance spectroscopy, the pump beam thus produces field-induced reflectance and transmittance changes from which the refractive index change is obtained.

Citation Download Citation

Nasser Peyghambarian, Stephan W. Koch, and Bernhard O. Seraphin "Dynamic Stark effect in semiconductors: high-speed modulation", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); https://doi.org/10.1117/12.20868

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