Aluminum-free 980-nm laser diodes for Er-doped optical fiber amplifiers

Markus Pessa; Jari T. Nappi; Alexander Ovtchinnikov; Pekka Savolainen; Harry M. Asonen

doi:10.1117/12.206883

24 April 1995 Aluminum-free 980-nm laser diodes for Er-doped optical fiber amplifiers

Markus Pessa, Jari T. Nappi, Alexander Ovtchinnikov, Pekka Savolainen, Harry M. Asonen

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206883
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

We review state-of-the-art aluminum-free GaInP-GaInAsP-GaInAs laser diodes which emit at the wavelength of 980 nm. These lasers are intended for pumping light into erbium-doped optical fiber amplifiers. We discuss the preparing of the layer structure, using the gas-source molecular beam epitaxy growth method, the lasing characteristics, fiber coupling efficiency, and reliability issues.

Citation Download Citation

Markus Pessa, Jari T. Nappi, Alexander Ovtchinnikov, Pekka Savolainen, and Harry M. Asonen "Aluminum-free 980-nm laser diodes for Er-doped optical fiber amplifiers", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206883

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