High-performance LWIR microbolometer with Si/SiGe quantum well thermistor and wafer level packaging

Audun Roer; Adriana Lapadatu; Erik Wolla; Gjermund Kittilsland

doi:10.1117/12.2014914

11 June 2013 High-performance LWIR microbolometer with Si/SiGe quantum well thermistor and wafer level packaging

Audun Roer, Adriana Lapadatu, Erik Wolla, Gjermund Kittilsland

Proceedings Volume 8704, Infrared Technology and Applications XXXIX; 87041B (2013) https://doi.org/10.1117/12.2014914
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

An uncooled microbolometer with peak responsivity in the long wave infrared region of the electromagnetic radiation is developed at Sensonor AS. It is a 384 x 288 focal plane array with a pixel pitch of 25µm, based on monocrystalline Si/SiGe quantum wells as IR sensitive material. The high sensitivity (TCR) and low 1/f-noise are the main performance characteristics of the product. The frame rate is maximum 60Hz and the output interface is digital (LVDS). The quantum well thermistor material is transferred to the read-out integrated circuit (ROIC) by direct wafer bonding. The ROIC wafer containing the released pixels is bonded in vacuum with a silicon cap wafer, providing hermetic encapsulation at low cost. The resulting wafer stack is mounted in a standard ceramic package. In this paper the architecture of the pixels and the ROIC, the wafer packaging and the electro-optical measurement results are presented.

Citation Download Citation

Audun Roer, Adriana Lapadatu, Erik Wolla, and Gjermund Kittilsland "High-performance LWIR microbolometer with Si/SiGe quantum well thermistor and wafer level packaging", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87041B (11 June 2013); https://doi.org/10.1117/12.2014914

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