A comparative study of self-aligned quadruple and sextuple patterning techniques for sub-15nm IC scaling

Yijian Chen; Weiling Kang; Pan Zhang

doi:10.1117/12.2010582

12 April 2013 A comparative study of self-aligned quadruple and sextuple patterning techniques for sub-15nm IC scaling

Yijian Chen, Weiling Kang, Pan Zhang

Proceedings Volume 8683, Optical Microlithography XXVI; 86830Z (2013) https://doi.org/10.1117/12.2010582
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Self-aligned multiple patterning (SAMP) techniques can potentially scale integrated circuits down to half-pitch 7nm. In this paper, we present a comparative analysis of self-aligned quadruple (SAQP) and sextuple (SASP) techniques by investigating their technological merits and limitations, process complexity and cost structures, strategy of layout decomposition/synthesis, and yield impacts. It is shown that SASP process complexity is comparable to that of SAQP process, while it offers 50% gain in feature density and may be extended for one more node. The overlay yield of cut process is identified to be a challenge when the minimum device feature is scaled to half-pitch 7nm. The mask design issues for various applications using each technique are discussed, and the corresponding layout decomposition/synthesis strategy for complex 2D patterning is proposed. Although the high-dose EUV single-cut process can save significant costs when applied to replace the 193i multiple-cut process to form fin/gate structures, our cost modeling results show that SADP+EUV approach is still not cost effective for patterning other critical layers that generally require the same mask number (and lithographic steps) as the non-EUV schemes.

Citation Download Citation

Yijian Chen, Weiling Kang, and Pan Zhang "A comparative study of self-aligned quadruple and sextuple patterning techniques for sub-15nm IC scaling", Proc. SPIE 8683, Optical Microlithography XXVI, 86830Z (12 April 2013); https://doi.org/10.1117/12.2010582

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available