A FEM in frequency domain for a transient electric field in non-sinusoidal steady state under the non-sinusoidal periodic voltage

This paper aims to focus on the finite element method in the frequency domain (FD-FEM) for the transient electric field in the non-sinusoidal steady state under the non-sinusoidal periodic voltage excitation.

Firstly, the boundary value problem of the transient electric field in the frequency domain is described, and the finite element equation of the FD-FEM is derived by Galerkin’s method. Secondly, the constrained electric field equation on the boundary in the frequency domain (FD-CEFEB) is also derived, which can solve the electric field intensity on the boundary and the dielectric interface with high accuracy. Thirdly, the calculation procedures of the FD-FEM with FD-CEFEB are introduced in detail. Finally, a numerical example of the press-packed insulated gate bipolar transistor under the working condition of the repetitive turn-on and turn-off is given.

The FD-CEFEB improves numerical accuracy of electric field intensity on the boundary and interfacial charge density, which can be achieved by modifying the existing FD-FEMs’ code in appropriate steps. Moreover, the proposed FD-FEM and the FD-CEFEB will only increase calculation costs by a little compared with the traditional FD-FEMs.

The FD-CEFEB can directly solve the electric field intensity on the boundary and the dielectric interface with high accuracy. This paper provides a new FD-FEM for the transient electric field in the non-sinusoidal steady state with high accuracy, which is suitable for combined insulation structure with a long time constant.