Issue 39, 2023

Recycled and flexible boron nitride heat spread film with high thermal conductivity

Abstract

In the rapidly advancing information age, the demand for highly thermally conductive and insulating materials is increasing due to the miniaturization and high-power density of electronic devices. Therefore, large-scale production of highly thermally conductive and insulating materials plays an important role in alleviating the pressure of industrial production. Herein, highly thermally conductive and insulating heat spread films combining polyvinyl butyral (PVB) and hexagonal boron nitride (h-BN) are prepared via tape-casting and vacuum hot-pressing technology. The vacuum hot-pressing technology is superior to produce densely packed and uniformly oriented h-BN fillers. Accordingly, the in-plane thermal conductivity of the vacuum hot-pressed boron nitride heat spreader (BNHS-VHP) is as high as 73.38 W m−1 K−1, which represents a nearly 400% increase over the boron nitride heat spreader (BNHS) (∼18.46 W m−1 K−1). The BNHS-VHP as a heat spreading film between the system on chip (SoC) and the heat sink can effectively reduce the temperature of a phone's motherboard. Furthermore, h-BN is easily recyclable due to the solubility of the PVB matrix in ethanol. The thermal transportation and mechanical properties of the heat spreader with recycled h-BN filler are similar to those of the heat spreader with the original h-BN filler. This approach provides valuable experience for practical production and reduces the cost of raw materials for industrial manufacturing.

Graphical abstract: Recycled and flexible boron nitride heat spread film with high thermal conductivity

Supplementary files

Article information

Article type
Paper
Submitted
03 Aug 2023
Accepted
06 Sep 2023
First published
06 Sep 2023

J. Mater. Chem. C, 2023,11, 13204-13212

Recycled and flexible boron nitride heat spread film with high thermal conductivity

J. Zhang, X. Kong, Y. Wang, Z. Zhang, L. Li, K. Xu, M. Li, R. Yang, Y. Zhou, T. Cai, W. Dai, C. Lin, K. Nishimura, Z. Pan, N. Jiang and J. Yu, J. Mater. Chem. C, 2023, 11, 13204 DOI: 10.1039/D3TC02761A

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