Issue 55, 2021, Issue in Progress
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RSC Advances

Modified vapor phase deposition technology for high-performance uncooled MIR PbSe detectors†

Jijun Qiu, ORCID logo *a   Yun Liu,a   Guodong Zhang,a   Kanghao Shi,a   Yanzhen Lia  and  Yingmin Luoa  

* Corresponding authors

a School of Microelectronics, Dalian University of Technology, Dalian, PR China
E-mail: jjqiu@dlut.edu.cn

Abstract

The low performance of middle infrared (MIR) PbSe detectors fabricated from vapor phase deposition (VPD) technology restricts the rapid development of VPD technology and detector commercialization. A modified VPD process was proposed to duplicate the microstructural features of high-performance CBD-PbSe detectors for a breakthrough in the VPD technology. A peak detectivity D* of 1.6 × 1010 cm Hz1/2 W−1 at 298 K was achieved under the optimized sensitization, approaching the best performance of CBD-PbSe detectors. Through the contrasting various microstructures obtained from diverse methods, the nanoparticle self-assembly structure in VPD-PbSe oriented rod-like crystals is an important factor for the IR sensitivity. The microstructural evolution demonstrated that there is a large space to grow for VPD-PbSe detectivity D* via eliminating the voids formed in the iodine-sensitization process. The increased performance indicates that the modified VPD technology can provide technical support for the manufacturing of the megapixel uncooled lead-salt FPA imager and accelerate its industrialization.

Graphical abstract: Modified vapor phase deposition technology for high-performance uncooled MIR PbSe detectors

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Article information

DOI
https://doi.org/10.1039/D1RA06144E
Article type
Paper
Submitted
14 Aug 2021
Accepted
28 Sep 2021
First published
28 Oct 2021
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2021,11, 34908-34914

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Modified vapor phase deposition technology for high-performance uncooled MIR PbSe detectors

J. Qiu, Y. Liu, G. Zhang, K. Shi, Y. Li and Y. Luo, RSC Adv., 2021, 11, 34908 DOI: 10.1039/D1RA06144E

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