Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr3 interlayer grown by pulsed laser deposition

Yu Huang; Xiaoyu Zhou; Lichun Zhang; Guochen Lin; Man Xu; Yuan Zhao; Mengmeng Jiao; Dengying Zhang; Bingying Pan; Linwei Zhu; Fengzhou Zhao

doi:10.1039/D0TC02807J

Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr₃ interlayer grown by pulsed laser deposition†

Yu Huang,‡^a Xiaoyu Zhou,‡^a Lichun Zhang,

*^a Guochen Lin,^b Man Xu,^a Yuan Zhao,^a Mengmeng Jiao,

^a Dengying Zhang,^a Bingying Pan,^a Linwei Zhu^a and Fengzhou Zhao*^a

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* Corresponding authors

^a School of Physics and Optoelectronic Engineering, Ludong University, Yantai, China
E-mail: phyzlc@163.com, fzzhao@ustc.edu

^b College of Life and Environmental Sciences, Minzu University of China, Beijing, China

Abstract

Heterojunction light-emitting diodes (LED) based on n-ZnO/CsPbBr₃/p-GaN have been fabricated by using pulsed laser deposition (PLD). The effects of the CsPbBr₃ interlayer on the electroluminescence (EL) performance of n-ZnO/p-GaN have been systematically studied. It was found that the CsPbBr₃ interlayer plays an important role in the emission performance of the heterojunction LED. By adjusting the thickness of CsPbBr₃, the emission peaks of the heterojunction LED change from violet to greenish-yellow, indicating that the electroluminescence characters can be tuned by the CsPbBr₃ film thickness. Detailed emission mechanisms influenced by the CsPbBr₃ film have been investigated using the Anderson band diagram. The results provide a new method for the fabrication of single-chip white LEDs.

Journal of Materials Chemistry C

Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr₃ interlayer grown by pulsed laser deposition†

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Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr₃ interlayer grown by pulsed laser deposition

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Journal of Materials Chemistry C